VS-GB100TS60NPBF Vishay Vishay, VS-GB100TS60NPBF, IGBT Half Bridge Module, N-channel, Dual, 108 A max, 600 V, 7-Pin INT-A-PAK
Part Nnumber
VS-GB100TS60NPBF
Description
Vishay, VS-GB100TS60NPBF, IGBT Half Bridge Module, N-channel, Dual, 108 A max, 600 V, 7-Pin INT-A-PAK
The product with part number VS-GB100TS60NPBF (Vishay, VS-GB100TS60NPBF, IGBT Half Bridge Module, N-channel, Dual, 108 A max, 600 V, 7-Pin INT-A-PAK)
is from company Vishay and distributed with basic unit price 72,48 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationDual Dimensions94 x 35 x 28mm Height28mm Length94mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current108 A Maximum Gate Emitter Voltage± 20V Maximum Operating Temperature+150 °C Maximum Power Dissipation390 W Minimum Operating Temperature-40 °C Package TypeINT-A-PAK Pin Count7 Switching Speed8 → 60kHz Width35mm Product Details IGBT Modules, Vishay Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems. Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges. Wide range of industry-standard package styles Direct mount on heat sink Choice of PT, NPT, and Trench IGBT technologies Low-VCE(on) IGBT Switching frequency from 1 kHz to 150 kHzRugged transient performanceHigh isolation voltage up to 3500 V100 % lead (Pb)-free and RoHS-compliantLow thermal resistance Wide operating temperature range (-40 °C to +175 °C) IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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