SIS438DN-T1-GE3 Vishay Vishay SIS438DN-T1-GE3 N-channel MOSFET Transistor, 14.3 A, 20 V, 8-pin PowePAK 1212

Part Nnumber
SIS438DN-T1-GE3
Description
Vishay SIS438DN-T1-GE3 N-channel MOSFET Transistor, 14.3 A, 20 V, 8-pin PowePAK 1212
Producer
Vishay
Basic price
0,39 EUR

The product with part number SIS438DN-T1-GE3 (Vishay SIS438DN-T1-GE3 N-channel MOSFET Transistor, 14.3 A, 20 V, 8-pin PowePAK 1212) is from company Vishay and distributed with basic unit price 0,39 EUR. Minimal order quantity is 1 pc.


CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain, Triple Source Dimensions3.15 x 3.15 x 1.12mm Height1.12mm Length3.15mm Maximum Continuous Drain Current14.3 A Maximum Drain Source Resistance0.0125 Ω Maximum Drain Source Voltage20 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature150 °C Maximum Power Dissipation27.7 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypePowePAK 1212 Pin Count8 Typical Gate Charge @ Vgs15 nC@ 10 V Typical Input Capacitance @ Vds880 pF@ 10 V Typical Turn-Off Delay Time16 ns Typical Turn-On Delay Time15 ns Width3.15mm Product Details N-Channel MOSFET, 10A to 14A, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor


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