SI5513CDC-T1-GE3 Vishay Vishay SI5513CDC-T1-GE3 Dual N/P-channel MOSFET Transistor, 8-pin 1206 ChipFET
Part Nnumber
SI5513CDC-T1-GE3
Description
Vishay SI5513CDC-T1-GE3 Dual N/P-channel MOSFET Transistor, 8-pin 1206 ChipFET
The product with part number SI5513CDC-T1-GE3 (Vishay SI5513CDC-T1-GE3 Dual N/P-channel MOSFET Transistor, 8-pin 1206 ChipFET)
is from company Vishay and distributed with basic unit price 0,34 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN, P ConfigurationDual Dimensions3.1 x 1.7 x 1.1mm Height1.1mm Length3.1mm Maximum Continuous Drain Current-3 (P-channel) A, 3.5 (N-Channel) A Maximum Drain Source Resistance0.085 (N-Channel) Ω, 0.255 (P-Channel) Ω Maximum Drain Source Voltage20 (N-Channel) V, -20 (P-Channel) V Maximum Gate Source Voltage±12 V Maximum Operating Temperature150 °C Maximum Power Dissipation3.1 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip2 Package Type1206 ChipFET Pin Count8 Typical Gate Charge @ Vgs2.8 nC@ 5 V (N-Channel), 3.9 nC@ -5 V (P-Channel) Typical Input Capacitance @ Vds252 pF@ -10 V (P-Channel), 285 pF@ 10 V (N-Channel) Typical Turn-Off Delay Time16 (N-Channel) ns, 18 (P-Channel) ns Typical Turn-On Delay Time19 (P-Channel) ns, 8 (N-Channel) ns Width1.7mm Product Details Dual N/P-Channel MOSFET, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor
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