SI2315BDS-T1-E3 Vishay Vishay SI2315BDS-T1-E3 P-channel MOSFET Transistor, 3 A, 12 V, 3-Pin TO-236

Part Nnumber
SI2315BDS-T1-E3
Description
Vishay SI2315BDS-T1-E3 P-channel MOSFET Transistor, 3 A, 12 V, 3-Pin TO-236
Producer
Vishay
Basic price
0,39 EUR

The product with part number SI2315BDS-T1-E3 (Vishay SI2315BDS-T1-E3 P-channel MOSFET Transistor, 3 A, 12 V, 3-Pin TO-236) is from company Vishay and distributed with basic unit price 0,39 EUR. Minimal order quantity is 1 pc.


CategoryPower MOSFET Channel ModeEnhancement Channel TypeP ConfigurationSingle Dimensions3.04 x 1.4 x 1.02mm Height1.02mm Length3.04mm Maximum Continuous Drain Current3 A Maximum Drain Source Resistance0.05 Ω Maximum Drain Source Voltage12 V Maximum Gate Source Voltage±8 V Maximum Operating Temperature+150 °C Maximum Power Dissipation0.75 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-236 Pin Count3 Typical Gate Charge @ Vgs8 nC V @ 4.5 Typical Input Capacitance @ Vds715 pF V @ 6 Typical Turn-Off Delay Time50 ns Typical Turn-On Delay Time15 ns Width1.4mm Product Details P-Channel MOSFET, up to 3A, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor


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